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High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells
ArticleAbstract: Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to furtPalabras claves:electron mobility, hydrogenated fluorine-doped indium oxide (IFO:H), passivating contacts, Silicon heterojunction (SHJ), transparent conductive oxide (TCO)Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusRealizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO <inf>x</inf>/Poly-Si Passivating Contacts
ArticleAbstract: In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultPalabras claves:carrier-selective passivating contacts, hydrogen annealing, hydrogenated fluorine-doped indium oxide (IFO:H), transparent conductive oxide (TCO), ultrathin SiO /poly-Si passivating contacts xAutores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopus