Palabras claves: ageing, Aging effects, Bipolar devices, Bipolar junction transistors, Bipolar transistors, BJT, Degradation process, Failure analysis, Failure mechanisms, Failure propagation, Fault diagnosis, FET, Field-effect transistors, Gallium compounds, Gallium nitride, GaN, IGBT, III-V semiconductors, Insulated gate bipolar transistors, Insulated gate field effect transistors, Inverters, Invertors, MOSFET, Parasitic structures, Power bipolar transistors, Power converter reliability, Power convertors, power electronics, Power electronics, supply and supervisory circuits, Power MOSFET, power semiconductor devices, Power semiconductors diagnosis, Power semiconductors model, reliability, Semiconductor device modelling, equivalent circuits, design and testing, Semiconductor device models, Semiconductor device reliability, SiC, Silicon carbide, Silicon compounds, Silicon-based power semiconductors, Wide band gap semiconductors
Autores: Ginart A., J. M. Aller, José Manuel Aller Castro, Vachtsevanos G.J.
