Will SiO<inf>x</inf>-pinholes for SiO<inf>x</inf>/poly-Si passivating contact enhance the passivation quality?

Article

Abstract: Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to t

Palabras claves:

Enhanced passivation, Pinhole density, Poly-Si passivating Contacts, Thermal diffusion budget

Autores:

Gram R., Han C., Isabella O., Mazzarella L., Paul Procel, Singh M., Yang G., Yao Z., Zeman M., Zhao Y.

Fuentes:

scopus