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IEEE Transactions on Nuclear Science(4)
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS(1)
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Ingeniería electrónica(3)
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scopus(5)
Evaluating the SEE Sensitivity of a 45 nm SOI Multi-Core Processor Due to 14 MeV Neutrons
ArticleAbstract: The aim of this work is to evaluate the SEE sensitivity of a multi-core processor having implementedPalabras claves:Accelerated testing, AMP, Multi-core, SEE, SEFI, SEU, SMP, Soft error, SOIAutores:Baylac M., Clemente J.A., Francesca Villa, Mehaut J.F., Pablo F. Ramos, Rey S., Vanessa Vargas, Velazco R., Zergainoh N.E.Fuentes:scopusEvidence of the robustness of a cots soft-error free SRAM to Neutron Radiation
ArticleAbstract: Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desigPalabras claves:Cots, LPSRAM, MUSCA SEP3, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mansour W., Palomar C., Rey S., Rosetto O., Velazco R.Fuentes:scopusSensitivity to neutron radiation of a 45 nm SOI multi-core processor
Conference ObjectAbstract: The purpose of this paper is to evaluate the SEU sensitivity of a multi-core SoC working in two diffPalabras claves:Asymmetric multi-processing, Multi-core, SEU, Soft error, SOI, Symmetric Multi-ProcessingAutores:Baylac M., Clemente J.A., Francesca Villa, Pablo F. Ramos, Rey S., Vanessa Vargas, Velazco R., Zergainoh N.E.Fuentes:scopusRadiation Experiments on a 28 nm Single-Chip Many-Core Processor and SEU Error-Rate Pbkp_rediction
ArticleAbstract: This work evaluates the SEE static and dynamic sensitivity of a single-chip many-core processor haviPalabras claves:Accelerated testing, fault injection, Many-core, parallel processing, SEE, SEFI, SEU, Soft errorAutores:Baylac M., Dupont De Dinechin B., Francesca Villa, Jalier C., Mehaut J.F., Pablo F. Ramos, Ray V., Rey S., Stevens R., Vanessa Vargas, Velazco R., Zergainoh N.E.Fuentes:scopusSEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
ArticleAbstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltagePalabras claves:Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)Autores:Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus