Moussaouy A.E.
45
Coauthors
5
Documentos
Volumen de publicaciones por año
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Año de publicación | Num. Publicaciones |
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2021 | 3 |
2022 | 2 |
Publicaciones por áreas de conocimiento
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Área de conocimiento | Num. Publicaciones |
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Ciencia de materiales | 4 |
Mecánica cuántica | 3 |
Nanostructura | 2 |
Ingeniería electrónica | 2 |
Física | 1 |
Publicaciones por áreas temáticas
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Área temática | Num. Publicaciones |
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Electricidad y electrónica | 4 |
Física | 3 |
Física aplicada | 3 |
Química analítica | 2 |
Explosivos, combustibles y productos relacionados | 1 |
Química física | 1 |
Principales fuentes de datos
Origen | Num. Publicaciones |
---|---|
Scopus | 5 |
Google Scholar | 0 |
RRAAE | 0 |
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Coautores destacados por número de publicaciones
Coautor | Num. Publicaciones |
---|---|
Belamkadem L. | 4 |
Chnafi M. | 4 |
Mommadi O. | 4 |
David Laroze | 4 |
Duque C.A. | 4 |
Vinasco J.A. | 4 |
Boussetta R. | 3 |
Meziani Y.M. | 2 |
Laura M. Pérez | 1 |
Tulupenko V. | 1 |
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Publicaciones del autor
Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopusHydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge
ArticleAbstract: In this paper we have studied the spectrum of an off-center donor impurity confined in the GaAs coniPalabras claves:Conical quantum dot with spherical edge, Diamagnetic susceptibility, Dipole moment, Hydrostatic pressure, Impurity binding energy, TEMPERATUREAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., El Hadi M., Falyouni F., Mommadi O., Mora-Rey F., Moussaouy A.E., Vinasco J.A.Fuentes:scopusFirst Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots
ArticleAbstract: Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials deliveringPalabras claves:Binding energy, Donor impurity, Ground state energy, Nanoflakes, Ultra-thin quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., Kasapoglu E., Laura M. Pérez, Meziani Y.M., Mommadi O., Moussaouy A.E., Tulupenko V., Vinasco J.A.Fuentes:scopusThe intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots
ArticleAbstract: Taking into account an infinite confinement potential, including the influence of external electricPalabras claves:Binding energy, Donor impurity, electric field, Wedge-shaped cylindrical quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., Chouef S., David Laroze, Duque C.A., Fobasso Mbognou F.C., Kenfack-Sadem C., Kerkour El-Miad A., Keumo Tsiaze R.M., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopus