Documentos de Moussaouy A.E. | REDI

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Mostrando 4 resultados de: 4

Filtros aplicados

Área temáticas: "Electricidad y electrónica"

Subtipo de publicación

Publisher

Physica E: Low-Dimensional Systems and Nanostructures(1)

Sensors (Switzerland)(1)

Superlattices and Microstructures(1)

Thin Solid Films(1)

Área temáticas

Física aplicada(3)

Química analítica(1)

Química física(1)

Área de conocimiento

Mecánica cuántica(3)

Ciencia de materiales(2)

Ingeniería electrónica(1)

Nanostructura(1)

Objetivos de Desarrollo Sostenible

ODS 9: Industria, innovación e infraestructura(4)

ODS 17: Alianzas para lograr los objetivos(2)

ODS 4: Educación de calidad(2)

ODS 8: Trabajo decente y crecimiento económico(2)

ODS 12: Producción y consumo responsables(1)

Año de Publicación

Origen

Palabras Claves

Binding energy(2)

Donor impurity(2)

Conical quantum dot with spherical edge(1)

Diamagnetic susceptibility(1)

Dipole moment(1)

Hydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge

Abstract: In this paper we have studied the spectrum of an off-center donor impurity confined in the GaAs coni

Palabras claves:

Conical quantum dot with spherical edge, Diamagnetic susceptibility, Dipole moment, Hydrostatic pressure, Impurity binding energy, TEMPERATURE

Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., El Hadi M., Falyouni F., Mommadi O., Mora-Rey F., Moussaouy A.E., Vinasco J.A.

Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot

Abstract: In this work, we have studied the electronic states with and without a donor impurity positioned on

Palabras claves:

Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dot

Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.

Numerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets

Abstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped field

Palabras claves:

electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertz

Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.

The intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots

Abstract: Taking into account an infinite confinement potential, including the influence of external electric

Palabras claves:

Binding energy, Donor impurity, electric field, Wedge-shaped cylindrical quantum dot

Belamkadem L., Boussetta R., Chnafi M., Chouef S., David Laroze, Duque C.A., Fobasso Mbognou F.C., Kenfack-Sadem C., Kerkour El-Miad A., Keumo Tsiaze R.M., Mommadi O., Moussaouy A.E., Vinasco J.A.