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Physica E: Low-Dimensional Systems and Nanostructures(1)
Sensors (Switzerland)(1)
Thin Solid Films(1)
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Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopusThe intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots
ArticleAbstract: Taking into account an infinite confinement potential, including the influence of external electricPalabras claves:Binding energy, Donor impurity, electric field, Wedge-shaped cylindrical quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., Chouef S., David Laroze, Duque C.A., Fobasso Mbognou F.C., Kenfack-Sadem C., Kerkour El-Miad A., Keumo Tsiaze R.M., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopus