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Physica E: Low-Dimensional Systems and Nanostructures(1)
Sensors (Switzerland)(1)
Superlattices and Microstructures(1)
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scopus(3)
Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopusHydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge
ArticleAbstract: In this paper we have studied the spectrum of an off-center donor impurity confined in the GaAs coniPalabras claves:Conical quantum dot with spherical edge, Diamagnetic susceptibility, Dipole moment, Hydrostatic pressure, Impurity binding energy, TEMPERATUREAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., El Hadi M., Falyouni F., Mommadi O., Mora-Rey F., Moussaouy A.E., Vinasco J.A.Fuentes:scopus