Numerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets

Article

Abstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped field

Palabras claves:

electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertz

Autores:

Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.

Fuentes:

scopus