Vinasco J.A.
105
Coauthors
12
Documentos
Volumen de publicaciones por año
Cargando gráfico
Año de publicación | Num. Publicaciones |
---|---|
2020 | 2 |
2021 | 7 |
2022 | 3 |
Publicaciones por áreas de conocimiento
Cargando gráfico
Área de conocimiento | Num. Publicaciones |
---|---|
Mecánica cuántica | 9 |
Ciencia de materiales | 9 |
Física | 4 |
Nanostructura | 3 |
Semiconductor | 2 |
Nanopartícula | 1 |
Optimización matemática | 1 |
Publicaciones por áreas temáticas
Cargando gráfico
Área temática | Num. Publicaciones |
---|---|
Electricidad y electrónica | 6 |
Física | 5 |
Física aplicada | 5 |
Física moderna | 4 |
Magnetismo | 3 |
Química analítica | 3 |
Química física | 2 |
Explosivos, combustibles y productos relacionados | 1 |
Química inorgánica | 1 |
Cristalografía | 1 |
Principales fuentes de datos
Origen | Num. Publicaciones |
---|---|
Scopus | 12 |
Google Scholar | 0 |
RRAAE | 0 |
Cargando gráfico
Coautores destacados por número de publicaciones
Coautor | Num. Publicaciones |
---|---|
David Laroze | 12 |
Duque C.A. | 12 |
Radu A. | 7 |
Morales A.L. | 6 |
Restrepo R.L. | 5 |
Belamkadem L. | 4 |
Chnafi M. | 4 |
Mommadi O. | 4 |
Moussaouy A.E. | 4 |
Mora-Ramos M.E. | 4 |
Cargando gráfico
Top Keywords
Cargando gráfico
Publicaciones del autor
Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires
ArticleAbstract: We investigate the tunnel effect influence on the intersubband optical absorption and refraction inPalabras claves:absorption coefficient, electric field, Intersubband transition, Quantum well wire, Refraction index, SEMICONDUCTOR, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Radu A., Vinasco J.A.Fuentes:scopusEffects of intense laser field and position dependent effective mass in Razavy quantum wells and quantum dots
ArticleAbstract: Using the effective mass and parabolic band approximations, we investigated the position-dependent ePalabras claves:Intense laser field, Position dependent effective mass, Razavy quantum dot, Razavy quantum wellAutores:David Laroze, Duque C.A., Kasapoglu E., Sari H., Sökmen I., Vinasco J.A.Fuentes:scopusElectronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusOptical properties and conductivity of biased GaAs quantum dots
ArticleAbstract: We report the intraband optical absorption influence on the tunneling currents in biased gallium arsPalabras claves:absorption coefficient, Electrical conductivity, Intraband transitions, quantum dots, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Gil-Corrales J.A., Morales A.L., Radu A., Vinasco J.A.Fuentes:scopusRevisiting the adiabatic approximation for bound states calculation in axisymmetric and asymmetrical quantum structures
ArticleAbstract: The Schrödinger equation in the effective mass approximation is commonly used to calculate the electPalabras claves:Adiabatic approximation, Excited levels, Finite Element Method, quantum dots, Quantum rings, symmetryAutores:David Laroze, Duque C.A., Feddi E.M., Mora-Ramos M.E., Morales A.L., Radu A., Restrepo R.L., Tiutiunnyk A., Vinasco J.A.Fuentes:scopus