Documentos de Vinasco J.A. | REDI

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Mostrando 2 resultados de: 2

Filtros aplicados

Área de conocimiento: "Semiconductor"

Subtipo de publicación

Publisher

Nanomaterials(1)

Physica E: Low-Dimensional Systems and Nanostructures(1)

Área temáticas

Cristalografía(1)

Física aplicada(1)

Física moderna(1)

Ingeniería y operaciones afines(1)

Área de conocimiento

Ciencia de materiales(2)

Mecánica cuántica(1)

Año de Publicación

Origen

Palabras Claves

Applied magnetic field(1)

Donor-impurity states(1)

Exciton states(1)

Intersubband transition(1)

Quantum well wire(1)

Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires

Abstract: We investigate the tunnel effect influence on the intersubband optical absorption and refraction in

Palabras claves:

absorption coefficient, electric field, Intersubband transition, Quantum well wire, Refraction index, SEMICONDUCTOR, Tunnel effect

Aqiqi S., David Laroze, Duque C.A., Radu A., Vinasco J.A.

Shallow donor impurity states with excitonic contribution in GaAs/AlGaAs and CdTe/CdSe truncated conical quantum dots under applied magnetic field

Abstract: Using the effective mass approximation in a parabolic two-band model, we studied the effects of the

Palabras claves:

Applied magnetic field, Donor-impurity states, Exciton states, Truncated conical quantum dots, Type II quantum dots

David Laroze, Duque C.A., Gil-Corrales J.A., Kasapoglu E., Morales A.L., Pulgar-Velásquez L., Radu A., Restrepo R.L., Sierra-Ortega J., Vinasco J.A.