Documentos de Vinasco J.A. | REDI

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Filtros aplicados

Publisher: "Physica E: Low-Dimensional Systems and Nanostructures"

Subtipo de publicación

Área temáticas

Física aplicada(3)

Electricidad y electrónica(2)

Física moderna(2)

Área de conocimiento

Ciencia de materiales(3)

Mecánica cuántica(3)

Nanostructura(1)

Semiconductor(1)

Año de Publicación

Origen

Palabras Claves

Tunnel effect(2)

absorption coefficient(2)

Binding energy(1)

Donor impurity(1)

Electrical conductivity(1)

Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot

Abstract: In this work, we have studied the electronic states with and without a donor impurity positioned on

Palabras claves:

Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dot

Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.

Effects of intense laser field and position dependent effective mass in Razavy quantum wells and quantum dots

Abstract: Using the effective mass and parabolic band approximations, we investigated the position-dependent e

Palabras claves:

Intense laser field, Position dependent effective mass, Razavy quantum dot, Razavy quantum well

David Laroze, Duque C.A., Kasapoglu E., Sari H., Sökmen I., Vinasco J.A.

Optical properties and conductivity of biased GaAs quantum dots

Abstract: We report the intraband optical absorption influence on the tunneling currents in biased gallium ars

Palabras claves:

absorption coefficient, Electrical conductivity, Intraband transitions, quantum dots, Tunnel effect

Aqiqi S., David Laroze, Duque C.A., Gil-Corrales J.A., Morales A.L., Radu A., Vinasco J.A.

Tunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires

Abstract: We investigate the tunnel effect influence on the intersubband optical absorption and refraction in

Palabras claves:

absorption coefficient, electric field, Intersubband transition, Quantum well wire, Refraction index, SEMICONDUCTOR, Tunnel effect

Aqiqi S., David Laroze, Duque C.A., Radu A., Vinasco J.A.