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Erratum: High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells (ACS Appl. Mater. Interfaces (2019) 11:49 (45586−45595) DOI: 10.1021/acsami.9b14709)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusHigh-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells
ArticleAbstract: Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to furtPalabras claves:electron mobility, hydrogenated fluorine-doped indium oxide (IFO:H), passivating contacts, Silicon heterojunction (SHJ), transparent conductive oxide (TCO)Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopus