Modelling the deposition of high-k dielectric films by first principles

Conference Object

Abstract: Considerable interest is focussed on high-k dielectrics as replacements for the gate oxide in future

Palabras claves:

ab initio calculations, Alumina, Atomic Layer Deposition, High-k dielectrics, Oxide surface

Autores:

Elliott S.D., Henry P. Pinto

Fuentes:

google

scopus