Mostrando 4 resultados de: 4
Filtros aplicados
Publisher
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(2)
Applied Sciences (Switzerland)(1)
Sensors (Switzerland)(1)
Área temáticas
Física aplicada(3)
Origen
scopus(4)
Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs
Conference ObjectAbstract: We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs usedPalabras claves:Autores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.Fuentes:scopusElectromagnetic Simulation to Determine Mesoscopic Dielectric Particle Parameters for Optimal Terajet Effect
Conference ObjectAbstract: This paper reports on optimization of the parameters, by mean of electromagnetic simulations to obtaPalabras claves:Autores:Abidi E.H., Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Velazquez-Perez J.E.Fuentes:scopusEffect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs
ArticleAbstract: Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) elPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopus