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Effect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs
ArticleAbstract: Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) elPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.Fuentes:scopusNumerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
ArticleAbstract: This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped fieldPalabras claves:electromagnetic simulation, MODFET, SiGe, silicon, Strained-Si, terahertzAutores:Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Moussaouy A.E., Velazquez-Perez J.E.Fuentes:scopus