Effect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs

Article

Abstract: Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) el

Palabras claves:

electromagnetic simulation, MODFET, SiGe, silicon, terahertz

Autores:

Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Velazquez-Perez J.E.

Fuentes:

scopus