Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect

Article

Abstract: We report on the enhancement of responsivity by more than one order of magnitude of a silicon-based

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Autores:

Calvo-Gallego J., Delgado-Notario J.A., Fobelets K., Meziani Y.M., Miguel Ferrando-Bataller, Minin I.V., Minin O.V., Salvador-Sánchez J., Velazquez-Perez J.E.

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scopus