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Current-induced nanogap formation and graphitization in boron-doped diamond films

Abstract:

A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ∼1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation. © 2012 American Institute of Physics.

Año de publicación:

2012

Keywords:

    Fuente:

    googlegoogle
    scopusscopus

    Tipo de documento:

    Article

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Nanostructura
    • Ciencia de materiales
    • Ciencia de materiales

    Áreas temáticas:

    • Física aplicada
    • Tecnologías de limpieza, color y recubrimiento
    • Cristalografía

    Contribuidores:

    Nesládek M.Nesládek M.
    Van Der Zant H.S.J.Van Der Zant H.S.J.
    Castellanos-Gomez A.Castellanos-Gomez A.
    Prins F.Prins F.
    Janssens S.D.Janssens S.D.
    Carlos R. ArroyoCarlos R. Arroyo
    Dulic D.Dulic D.
    Haenen K.Haenen K.
    Sudhölter E.J.R.Sudhölter E.J.R.
    De Smet L.C.P.M.De Smet L.C.P.M.
    Seshan V.Seshan V.
    Perrin M.L.Perrin M.L.