Donor-impurity related photoionization cross section in GaAs / Ga 1 <inf>-c</inf><sup>do</sup>uble quantum rings: Effects of geometry and hydrostatic pressure
Abstract:
The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value. © 2014 Elsevier B.V.
Año de publicación:
2014
Keywords:
- Hydrostatic pressure
- Binding energy
- Photoionization cross section
- Double quantum ring
Fuente:

Tipo de documento:
Article
Estado:
Acceso restringido
Áreas de conocimiento:
- Ciencia de materiales
- Semiconductor
Áreas temáticas:
- Física moderna
- Física
- Ingeniería y operaciones afines