Donor-impurity related photoionization cross section in GaAs / Ga 1 <inf>-c</inf><sup>do</sup>uble quantum rings: Effects of geometry and hydrostatic pressure


Abstract:

The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value. © 2014 Elsevier B.V.

Año de publicación:

2014

Keywords:

  • Hydrostatic pressure
  • Binding energy
  • Photoionization cross section
  • Double quantum ring

Fuente:

scopusscopus

Tipo de documento:

Article

Estado:

Acceso restringido

Áreas de conocimiento:

  • Ciencia de materiales
  • Semiconductor

Áreas temáticas:

  • Física moderna
  • Física
  • Ingeniería y operaciones afines