Regresar

Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

Abstract:

Studies of stability and growth of nanostructures and films have traditionally focused on the second derivative of the system energy. In the present case, such an analysis yields a pbkp_rediction for stability with a ∼2 ML period of oscillation. It is shown that it is important to consider the global energy landscape as well as the growth kinetics for a correct and complete pbkp_rediction of the growth behavior.

Año de publicación:

2003

Keywords:

    Fuente:

    scopusscopus
    googlegoogle

    Tipo de documento:

    Article

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Nanostructura
    • Ciencia de materiales
    • Ciencia de materiales

    Áreas temáticas:

    • Cristalografía
    • Física
    • Física moderna

    Contribuidores:

    Hong H.Hong H.
    Chiang T.C.Chiang T.C.
    Leonardo BasileLeonardo Basile
    Chen H.Chen H.
    Holt M.Holt M.
    Wei C.M.Wei C.M.
    Wu Z.Wu Z.
    Chou M.Y.Chou M.Y.