Electrical and optical properties of nanostructured indium doped zinc oxide thin films deposited by ultrasonic chemical spray technique, starting from zinc acetylacetonate and …

Abstract:

The physical characteristics of indium-doped zinc oxide [ZnO: In] thin films deposited by the ultrasonic spray pyrolysis technique were studied. We report the use of zinc acetylacetonate and indium acetate as Zn and In precursors, respectively; achieving ZnO: In thin films with both fast growth rate and homogeneous morphology; although undesirable homogeneous reaction in gas phase over substrate surface, at substrate temperatures higher than 500 C, leads to a rough and powdery film surface. The effect of both indium concentration and the substrate characteristics as temperature on the structure, morphology, optical, and electrical properties were measured. All the films, which were polycrystalline, fitted well with the hexagonal wurtzite type ZnO. A strong change in preferential growth, from (002) to (101) planes for indium doped samples was observed. ZnO films presented an electrical resistivity as low as 3.42× 10-3 Ω cm and an average optical transmittance in the visible-UV region as high as 80%. The surface morphology of the films showed an evolution from hexagonal slices to triangle shaped grains when the indium concentration increases. Derived from nonlinear optical explorations, the temporary optical response of the samples was evaluated to be close to 1 femtosecond. Potential applications in regards to the resulting low electrical resistance and high optical transparency of the studied samples were contemplated.

Año de publicación:

2014

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