Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)


Abstract:

The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.

Año de publicación:

2021

Keywords:

    Fuente:

    scopusscopus

    Tipo de documento:

    Other

    Estado:

    Acceso abierto

    Áreas de conocimiento:

    • Ciencia de materiales
    • Ciencia de materiales

    Áreas temáticas:

    • Ingeniería y operaciones afines
    • Química y ciencias afines
    • Fabricación