Analysis of the influence of the buffer layer in the characteristic impedance of electro-optic modulators


Abstract:

In this paper, a theoretical study of the influence of three differents dielectric films in the characteristic impedance of electro-optic modulators is analyzed. These devices are built in lithium niobate substrate and are used in high-speed and high-frequency optical communications. The modulating electric signal is applied to the coplanar waveguide or asymmetric coplanar strip electrodes. In order to obtain a good transfer of signal is indispensable to match the impedance; in this regard, a mathematical analysis through a friendly interface in Matlab® is developed.

Año de publicación:

2017

Keywords:

  • Silicon nitride
  • characteristic impedance
  • lithium niobate
  • dielectric buffer layer
  • silicon oxide
  • HSO

Fuente:

scopusscopus
googlegoogle

Tipo de documento:

Conference Object

Estado:

Acceso restringido

Áreas de conocimiento:

  • Ingeniería electrónica
  • Ingeniería electrónica
  • Electroquímica

Áreas temáticas:

  • Física aplicada