Analysis of the influence of the buffer layer in the characteristic impedance of electro-optic modulators
Abstract:
In this paper, a theoretical study of the influence of three differents dielectric films in the characteristic impedance of electro-optic modulators is analyzed. These devices are built in lithium niobate substrate and are used in high-speed and high-frequency optical communications. The modulating electric signal is applied to the coplanar waveguide or asymmetric coplanar strip electrodes. In order to obtain a good transfer of signal is indispensable to match the impedance; in this regard, a mathematical analysis through a friendly interface in Matlab® is developed.
Año de publicación:
2017
Keywords:
- Silicon nitride
- characteristic impedance
- lithium niobate
- dielectric buffer layer
- silicon oxide
- HSO
Fuente:
scopus
google
Tipo de documento:
Conference Object
Estado:
Acceso restringido
Áreas de conocimiento:
- Ingeniería electrónica
- Ingeniería electrónica
- Electroquímica
Áreas temáticas:
- Física aplicada