Analysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy

Abstract:

A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.

Año de publicación:

2022

Keywords:

• reset
• two-step transition
• filamentary conduction
• RERAM
• Switching
• stochastic model
• conductive filament

Fuente:

scopus

google