Free carrier absorption in the Ge:Sb:Te system

Abstract:

Absorption in the infrared region in the Ge:Sb:Te system has been observed in films having stoichiometric composition. All films were prepared by thermal evaporation from stoichiometric bulk materials. As prepared films have an amorphous structure and they crystallize into a cubic phase when annealed at approximately 200°C. Annealing at temperatures above 200°C induces a crystal to crystal transformation into the rhombohedral phase in all films with the exception of that having the composition (40:10:50). Free carrier absorption is only observed in films in the rhombohedral phase. Hall measurements in similar samples are in good agreement with the infrared data. © 1995.

Año de publicación:

1995

Keywords:

• D. phase transitions
• D. Optical properties
• A. disordered systems
• E. light absorption and reflection

Fuente:

scopus