Gold induced crystallization of amorphous silicon

Abstract:

The phenomena of gold (Au) induced crystallization of amorphous silicon (a-Si) are investigated. The a-Si treated with an ultra thin coating of gold solution with a concentration of 10,000 ppm, annealed at a temperature of 500 C is a very active system from the point of view of the structural transformations. The crystallization takes place by interaction of the free electrons of the Au atoms that rearrange the silicon bonding turning it into crystalline structure. At a nano level, the structures form a network composed by needles, in some cases they are large and thick and the angles between them are exclusively acute and obtuse, while in small and thin formations the formed angles are right. After the thermal process, the polycrystalline silicon (poly-Si) is composed of the needle-like crystallites forming a packed and continuous structure. The electron diffraction pattern suggests the formation and existence of gold-related compounds and their later disappearance in the intermediate stages of the process. The electrical characteristics of the poly-Si are altered because of the gold that after the process remains in the structure of the film.

Año de publicación:

2001

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