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Impact of random process variations on different 65nm SRAM cell topologies

Abstract:

In this paper, the influence of random process variations on different low leakage SRAM topologies has been analyzed. This analysis was performed through extensive Monte Carlo simulations and exploiting a commercial 65 nm technology. Simulation results demonstrate that the Low Vdd SRAM cell presents the best trade-off between performances and robustness against random process variations. © 2010 IEEE.

Año de publicación:

2010

Keywords:

  • SRAM cell
  • Random process variation
  • Low leakage
  • Monte Carlo simulations

Fuente:

scopusscopus

Tipo de documento:

Conference Object

Estado:

Acceso restringido

Áreas de conocimiento:

  • Simulación por computadora

Áreas temáticas:

  • Ciencias de la computación

Contribuidores:

Corsonello P.Corsonello P.
Marco LanuzzaMarco Lanuzza
Kansal S.Kansal S.