Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

Abstract:

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

Año de publicación:

2015

Keywords:

• Lateral electric field
• Coupled quantum dot-ring
• Exact diagonalization method
• Hydrogenic donor impurity

Fuente:

scopus