Initial growth stages of AlF<inf>3</inf> on Cu(100): An STM study

Abstract:

In this study we present results concerning the early growth stages of an insulator-metal interface by means of scanning tunnelling microscopy. In particular, we report the growth of aluminium fluoride (AlF3) islands over a Cu (100) surface at room temperature, from sub-monola-yer coverages up to 1.25 monolayers. These islands cover the substrate with a single monolayer film up to depositions of 0.80 monolayers, with 3D growth beyond this coverage. High voltages (V ≥ 2.50 V) are needed to obtain STM images, showing the insulator character of the AlF3 islands. Important modifications are observed in the AlF3/Cu (100) surface after an annealing treatment. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Año de publicación:

2010

Keywords:

• AlF growth 3
• STM
• Insulator-metal interface
• annealing

Fuente:

scopus