Innovative patterning method for modifying few-layer MoS<inf>2</inf> device geometries

Abstract:

When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

Año de publicación:

2017

Keywords:

• sulfur vacancies
• μRaman
• 2d materials
• PEBGAP

Fuente:

scopus

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