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Intense Terahertz Radiation Effect on Electronic and Intraband Optical Properties of Semiconductor Quantum Rings

Abstract:

The current chapter aims to theoretically demonstrate that intense Terahertz (THz) laser field can be a powerful method for the controlling of electro-optical properties of quantum rings (QRs). We explore the electronic and impurity states, charge localization and intraband optical phenomena in GaAs/GaAl QRs irradiated by the intense THz laser field. Single and concentric double QRs, as well as artificial molecules formed by the laterally aligned QRs are explored. It is demonstrated how the laser field modifies the energy spectrum and wave functions by the strong distortion of the original cylindrical geometry of quantum confinement. Moreover, our findings give an insight on the laser field-affected inter-ring coupling of concentric double QRs and dissociation of QR molecules. Additionally, the new way of control of quantum-confining Stark effect with intense THz laser field is introduced.