Intense laser field effect on D<inf>2</inf>⁺ molecular complex localized in semiconductor quantum wells

Abstract:

D2+ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D2+ total energy and the D2+ binding energy corresponding to the second ionization process D2+→D++D++e- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D2+- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D0.

Año de publicación:

2019

Keywords:

• H -like impurities 2 +
• Quantum well
• Finite Element Method
• Binding energy
• Coupled donors
• Laser field radiation

Fuente:

scopus