Microwave Transistor Model Including Electronic Mobility Pbkp_rediction

Abstract:

This work presents a methodology for modeling microwave transistors in different technologies. As result of comparisons, a new methodology is proposed which can be useful to design and implement RF amplifiers with medium and high power transistors taking into account the frequency dispersion phenomena. One of the properties of this model is its ability to extract analytically the transconductance, output conductance and electronic mobility in multibias and at several frequencies.

Año de publicación:

2018

Keywords:

• Scattering parameters
• Microwave devices
• pulsed measurements
• FETs
• Circuit modeling

Fuente:

scopus