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Model for resistive switching in bipolar Hafnium-based memories

Abstract:

A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented. In this model, the switching occurs because of changes in a small region of the conductive filament that can be represented by a set of vertical resistors. These resistors can change their conduction mechanism between trap-assisted tunneling (TAT) and ohmic conduction according to the applied external voltage and a switching probability. The model has been calibrated with hafnium-based experimental data, and the results show an excellent agreement between model simulation and experimental response.