Monte Carlo study of the mechanisms of THz radiation from narrow-gap semiconductor n-InAs

Abstract:

Using the ensemble Monte Carlo method, we have simulated the THz temporal waveforms from narrow-gap semiconductor n-InAs and wide-gap semiconductor n-GaAs. The radiation mechanism for n-InAs is confirmed as the photo-Dember field, and the reason for the higher radiation efficiency of n-InAs than that of n-GaAs is: in the area occupied by the major part of photo-generated carriers, the electric field in n-GaAs is much smaller than that in n-InAs. This reason was not mentioned in all previous studies.

Año de publicación:

2007

Keywords:

• THz radiation
• N-GaAs
• N-InAs
• Monte carlo simulation

Fuente:

scopus