New technique for the implementation of nonlinear models for microwave transistors for broadband data communication

Abstract:

A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to pbkp_redict the frequency dispersion.

Año de publicación:

2015

Keywords:

• pulsed measurements
• Microwave devices
• memory effects
• FETs
• Scattering parameters
• Circuit modeling

Fuente:

scopus