New technique for the implementation of nonlinear models for microwave transistors for broadband data communication

Abstract:

A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.

Año de publicación:

2015

Keywords:

• pulsed measurements
• Microwave devices
• memory effects
• FETs
• Scattering parameters
• Circuit modeling

Fuente:

scopus