Non Linear Modeling for the Frequency Dispersive Effects and Electronic Mobility on Microwave Transistors

Abstract:

Differences between static and dynamic behavior of microwave transistors have been studied through different models. Behavioral models are very accurate for pbkp_rediction of this phenomena without the necessity of electrical equivalent circuits. From other side, device level models based on semi-empirical equations can also model this phenomena by using non linear equivalent circuits but without the necessity of the knowledge of the physical parameters of the transistor. In this paper we will show the impact of the electrical mobility parameter in the pbkp_rediction of the difference between static and dynamic behavior of microwave devices, establishing a link between this parameter and electrical equivalent circuits. Modeling and characterization of mobility for different transistors will be presented.

Año de publicación:

2018

Keywords:

• GaN
• Modeling
• electronic mobility
• Intermodulation distortion
• GAAS
• Microwave transistors
• non linear equivalent circuits

Fuente:

scopus