Non-linear modeling for low and high power microwave transistors.

Abstract:

An improved way to implement nonlinear models for microwave transistors is shown for GaAs, GaN and LDMOS devices. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to pbkp_redict frequency dispersion.

Año de publicación:

2016

Keywords:

• Device level modeling
• Trapping effects
• GaN
• Microwave transistors
• GAAS
• pulsed measurements
• LDMOS

Fuente:

scopus