Nonlinear current source model for a GaAs transistor implemented in Verilog-A using pulsed measurements

Abstract:

A Verilog-A model for a GaAs MESFET was implemented and validated. A modified nonlinear equation for Ids shows good results in the modelling of DC and pulsed I-V measurements. Transient simulations were performed, showing some of the dispersive effects in RF transistors due to the presence of traps.

Año de publicación:

2020

Keywords:

• pulsed measurements
• compact model
• FETs
• Verilog-a

Fuente:

scopus