On a CVD-formed carbon nitrogen (C<inf>3</inf>N) film doped with Cu and Zn

Abstract:

A carbon nitrogen film was formed by chemical vapor deposition on a brass sheet starting from cyanurate of melamine as a precursor, at a temperature of 600 °C. The film was easily detached, and thoroughly characterized by means of various techniques, including X-ray photoelectron spectroscopy, X-ray diffraction, UV-Vis and infrared spectroscopies, and scanning and transmission microscopy. The material exhibited a layered structure, with many particles of zinc and copper compounds embedded on the surface. The band gap was found to be 2.06 eV, much lower than that of conventional g-C3N4, with values between 3.0 and 2.7 eV. The formula is close to that of C3N, also known as bidimensional polyaniline.

Año de publicación:

2022

Keywords:

• C N 3
• carbon nitrogen film
• doped carbon nitrogen film
• Carbon nitride

Fuente:

scopus