On the parameter extraction of short channel UTBB-FDSOI FET's with high-κ metal gate and TCAD modelling

Abstract:

In this work an extraction method is proposed to obtain the electric and physical parameters of Ultra-Thin Body and Buried Oxide (UTBB) Fully Depleted SOI MOSFET with short channel length (below 100 nm). In order to check the accuracy of the extraction method, model is built using a TCAD with these parameters. We found that the simulation shows a very good agreement with the experimental curves. However, an improvement of the mobility model and a better definition of the extension of the model used in the TCAD is needed to get a perfect matching between the experimental and the simulated curves.

Año de publicación:

2018

Keywords:

• parasitic components
• Parameter extraction
• TCAD
• high-κ
• MOSFET
• modelling
• short channel
• UTTB-FDSOI

Fuente:

scopus