Study of the scaling and the temperature for RERAM cells using the QPC model
Abstract:
This article describes the OXRAM cell operation for different areas and temperatures using the Quantum Point Contact (QPC) model. Based on the QPC model the RERAM cell is described by a potential barrier variation using 2 parameters. The systematic extraction of this parameter for experimental I-V curves leads to conclude that the OXRAM cell does not depend on the scaling area cell but the temperature seems to degrade the performance cell above all for RERAM cell with dimension under 100nm. Further the needed energy to form the cells is increasing with the area scaling.
Año de publicación:
2016
Keywords:
- TEMPERATURE
- Tin
- HfO2
- area scaling
- RERAM
- QPC model
- high-κ
Fuente:
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Tipo de documento:
Article
Estado:
Acceso restringido
Áreas de conocimiento:
- Ingeniería electrónica
- Simulación por computadora
- Ciencia de materiales
Áreas temáticas:
- Ciencias de la computación
- Física aplicada