Terahertz lasers based on optically pumped four-level asymmetrical double quantum wells
Abstract:
A prototype of terahertz laser based on four-level asymmetric double GaAs/AlxGa1-xAs quantum well (QW) structures is presented. The prominent feature of this prototype is its close proximity of subband 0 and 1. An ensemble Monte Carlo method is adopted to analyze the electron population on each subband in this 4-level double QW. The close proximity of two bottom levels is found to have greatly improved the optically pumping efficiency. Also, an enhanced population inversion between subband 3 and 2 is obtained even at room temperature. Finally, the electric field Stark effect in QW is shown to be helpful for the close proximity of subband 0 and 1 in double QW. © 2011 Elsevier B.V. All Rights Reserved.
Año de publicación:
2011
Keywords:
Fuente:
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Tipo de documento:
Article
Estado:
Acceso restringido
Áreas de conocimiento:
- Mecánica cuántica
- Ingeniería electrónica
- Física
Áreas temáticas:
- Física aplicada
- Electricidad y electrónica