Terahertz lasers based on optically pumped four-level asymmetrical double quantum wells


Abstract:

A prototype of terahertz laser based on four-level asymmetric double GaAs/AlxGa1-xAs quantum well (QW) structures is presented. The prominent feature of this prototype is its close proximity of subband 0 and 1. An ensemble Monte Carlo method is adopted to analyze the electron population on each subband in this 4-level double QW. The close proximity of two bottom levels is found to have greatly improved the optically pumping efficiency. Also, an enhanced population inversion between subband 3 and 2 is obtained even at room temperature. Finally, the electric field Stark effect in QW is shown to be helpful for the close proximity of subband 0 and 1 in double QW. © 2011 Elsevier B.V. All Rights Reserved.

Año de publicación:

2011

Keywords:

    Fuente:

    scopusscopus

    Tipo de documento:

    Article

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Mecánica cuántica
    • Ingeniería electrónica
    • Física

    Áreas temáticas:

    • Física aplicada
    • Electricidad y electrónica

    Contribuidores: