Regresar

Theoretical study of THz radiation in the low-temperature grown GaAs

Abstract:

Through theoretical modeling, we find the carrier transports on the surface of the semiconductor play a very important role, shaping the temporal waveform of THz radiation pulses emitted from biased low-temperature (LT) grown GaAs antennas. Our research also displays that electron-hole collisions in LT-GaAs contributes to the saturation phenomenon with the increase of laser fluence.

Año de publicación:

2002

Keywords:

    Fuente:

    scopusscopus

    Tipo de documento:

    Conference Object

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Ciencia de materiales
    • Física
    • Ciencia de materiales

    Áreas temáticas:

    • Magnetismo

    Contribuidores:

    Qin J.Qin J.
    Dongfeng LiuDongfeng Liu
    Yuan X.Yuan X.