Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

Abstract:

We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar⁺ bombardment. The irradiation was carried on normal to the surface with doses in the 1-60 × 10¹⁶ ions/cm² range. We observed a first generation of blisters at a critical dose around 3 × 10¹⁶ ions/cm², which flakes off at 19 × 10¹⁶ ions/cm², and a second generation of smaller blisters between 35 and 45 × 10¹⁶ ions/cm². Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar⁺ implantation. For doses greater than 20 × 10¹⁶ Ar⁺/cm² the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation. © 2002 Elsevier Science B.V. All rights reserved.

Año de publicación:

2002

Keywords:

• Surface structure, morphology roughness and topography
• Ion implantation
• atomic force microscopy
• silicon

Fuente:

scopus