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Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution

Abstract:

Thin films of SnSe and SnSe<inf>2</inf> have been deposited using the ultrasonic spray pyrolysis (USP) technique. To the best of our knowledge this is the first report of the deposition of SnSe and SnSe<inf>2</inf> thin films using a single spray solution. The use of a single spray solution for obtaining both a p-type material, SnSe, and an n-type material, SnSe<inf>2</inf>, simplifies the deposition technique. The SnSe<inf>2</inf> thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV. The Hall measurements were used to determine the resistivity of the thin films. The SnSe<inf>2</inf> thin films show a resistivity of 36.73 ·cm and n-type conductivity while the SnSe thin films show a resistivity of 180 ·cm and p-type conductivity. © 2013 Chinese Institute of Electronics.