Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?

Abstract:

In this article the impact of Si-substrate orientation on mobility performance is studied for p-MOSFET's with both HfSiON and SiON based dielectrics. Consistent with previous studies, the I<inf>on</inf> at fixed I<inf>off</inf> is 100% larger for Si(1 1 0) larger than for standard Si(1 0 0). A thorough analysis of the factors influencing I<inf>on</inf> (EOT, mobility and R<inf>series</inf>) for short channel devices (until L<inf>met</inf> = 80 nm) indicates that a 200% increase of the mobility at high V<inf>g</inf> is the source of this performance enhancement. The lower I<inf>on</inf> increase (only 100%) compared to what is expected from the mobility is only explained by a larger impact of the R<inf>series</inf> (70% of the total resistance) for short channel devices. As a result additional room for I<inf>on</inf> improvement can be reached by device and R<inf>series</inf> optimization. © 2007 Elsevier B.V. All rights reserved.

Año de publicación:

2007

Keywords:

• high-κ
• Mobility and performance
• Si Substrate orientation
• short-channel devices

Fuente:

scopus