Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

Abstract:

This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (ç) and achieve record short-circuit current density (JSC): (i) a poly-poly cell (\eta = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, \eta = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively (\eta = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC (\eta = 23.0%, JSC = 42.2 mA/cm2).

Año de publicación:

2018

Keywords:

• short circuit current density
• Poly-Si passivating Contacts
• Ion implantation
• front surface field passivation
• C-Si wafer-based solar cells

Fuente:

scopus