CMOS-compatible waveguide-integrated Ge metal-semiconductor-metal photodetectors

Abstract:

We demonstrate Ge metal-semiconductor-metal (MSM) photodetectors monolithically integrated with silicon-oxynitride (SiO xN y) waveguides. Ge photodetector layer was epitaxially grown by an UHVCVD system and the waveguide was formed on top of the Ge photodetector by PECVD. The entire process is found to be completely compatible with the standard CMOS process. Light is evanescently coupled from silicon-oxynitride (SiO xN y) waveguide to the underlying Ge photodetector, achieving at 2 V a responsivity of 0.33 A/W at 1.55 μm wavelength and a dark current of 1 μA for a 10 μm long photodetector. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Año de publicación:

2011

Keywords:

• Optoelectronics
• Photonic integrated circuits
• Optical interconnects
• photodetectors

Fuente:

scopus